3DG6型NPN型硅高频小功率三极管参数
3DG6型NPN型硅高频小功率三极管参数
表1.1.14:
原型号 | 3DG6 | 测试条件 | ||||||
新型号 | 3DG100A | 3DG100B | 3DG100C | 3DG100D | ||||
极限参数 |
PCM(mW) |
100 | 100 | 100 | 100 | |||
ICM(mA) |
20 | 20 | 20 | 20 | ||||
BVCBO(V) |
≥30 | ≥40 | ≥30 | ≥40 | Ic=100μA | |||
BVCEO(V) |
≥20 | ≥30 | ≥20 | ≥30 | Ic=100μA | |||
BVEBO(V) |
≥4 | ≥4 | ≥4 | ≥4 | IE=100μA | |||
直流参数 |
ICBO(μA) |
≤0.01 | ≤0.01 | ≤0.01 | ≤0.01 | VEB=10V | ||
ICEO(μA) |
≤0.1 | ≤0.1 | ≤0.1 | ≤0.1 | VCE=10V | |||
IEBO(μA) |
≤0.01 | ≤0.01 | ≤0.01 | ≤0.01 | VEB=1.5V | |||
VBES(V) |
≤1 | ≤1 | ≤1 | ≤1 | Ic=10mA IB=1mA | |||
VCES(V) |
≤1 | ≤1 | ≤1 | ≤1 | Ic=10mA IB=1mA | |||
hFE |
≥30 | ≥30 | ≥30 | ≥30 | VCE=10V Ic=3mA | |||
交流 参数 |
fT(MHz) |
≥150 |
≥150 |
≥300 |
≥300 |
VCE=10V IE=3mA f=100MHz RL=5Ω | ||
Kp(dB) |
≥7 |
≥7 |
≥7 |
≥7 |
VCE=-6V IE=3mA f=100MHz | |||
Cob(pF) |
≤4 |
≤4 |
≤4 |
≤4 |
VCE=10V IE=0 | |||
hFE色标分档 (红)30~60; (绿)50~110; (蓝)90~160; (白)>150